New Arrivals

CTI Cryotorr 8 Cryo pump. Needs rebuild. Sold As is

Affinity FAE-121L-EE10CAD4 Air Cooled Recirculating Chiller. Refrigerent: R407. Nominal Heat Removed: 9.8 kW at 20 deg C. Pump Performance: 10 gpm at 55 psi. 1-3/4 inch NPT coolant supply/return lines. 460, 277, 380V, 3 Ph, 50/60 Hz, 37A, CE.

AITEC AR-SV3G-100 Wafer Transfer Robot. Was used in a vacuum cluster tool. No cables or controllers.

Alessi REL-4500 150mm Manual Analytical Wafer Prober. Vacuum Chuck: 6” dia. (150mm). Manual XY stage movement: 6” X x 6” Y.  Platen accepts vacuum or magnetic base probe manipulators. Mitutoyo microscope with single long working distance objective. Manual quick lift platen.

Allwin21 Accuthermo AW610 Rapid Thermal Processor.

The AccuThermo AW610 is a rapid thermal processing (RTP) system, which uses high intensity visible radiation to heat single wafers for short process periods of time at precisely controlled temperatures. The process periods are typically 1‑600 seconds in duration, although periods of up to 9999 seconds can be selected. The AccuThermo RTP AW610M rapid thermal annealing system consists of an oven unit and a controller computer running the Allwin21 RTAPRO controller software. The wafer to be processed is placed on a quartz tray that slides into a quartz isolation tube in the oven unit. Four banks of lamps, two above the quartz tube and two below it, provide the source of energy for heating the wafer. The lamps can be controlled manually and automatically from the controller computer. The RTAPRO control software allows full control and diagnostics of the AccuThermo RTP system.  In addition, it allows the creation of recipes for automated control of the temperature and, optionally, process gas flow. The control software uses a set of operating instructions known as recipes to automatically control the AccuThermo RTP system. These recipes are created by the Process Engineer to monitor and control the parameters of the processing cycle. The Operator then uses the software to select and run the process parameters (steady state temperature, process time, ramp rates, etc.).

HEATPULSE 610 Features

Manually loaded and capable of processing silicon and III-V substrates up to 150mm in diameter, Heatpulse 610 provides solutions to your process development and monitoring needs. Equipped with a graphical user interface to improve operator productivity, Heatpulse 610 offers recipe management and system diagnostics.

HEATPULSE 610 Major System Features

• Semiconductor grade quartz process chamber
• 21 tungsten halogen lamps in an upper and lower array
• Extended Range Pyrometer: 400°C -1300oC (200°C w/TC)
• Graphical User Interface(GUI)

These capabilities, combined with the heating chamber’s cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing.

HEATPULSE 610 Key Features Include

• Closed-loop temperature control with pyrometer or thermocouple temperature sensing.
• Precise time-temperature profiles tailored to suit specific process requirements.
• Fast heating and cooling rates unobtainable in conventional technologies.
• Consistent wafer-to-wafer process cycle repeatability.
• Elimination of external contamination.
• Small footprint and energy efficiency.

HEATPULSE 610 Performance Specifications

• Recommended Steady State Temperature Range: 400-1250° C.
• Steady-State Temperature Stability: ± 2° C.
• Temperature Monitoring Mechanisms: Extended Range Pyrometer (ERP), used throughout the recommended temperature range, or a thermocouple, used for process temperatures below 400° C.
• Heating Rate: 1-200° C per second, user-controllable.
• Cooling Rate: Temperature dependent; max 150° C per second.
• Maximum Non-uniformity:
• ±5°C across a 6″ (150mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicidation process, no more than 4% increase in non-uniformity during the first anneal at 650°C to 700 °C.
• Post-anneal sheet resistivity measured on a 150mm wafer annealed at 1100° C for 10 seconds. R&D models optimized for slip control.
• Implant: As 1E16 50 KeV with implant uniformity ≤0.3%
• Lamp Life: Unconditionally guaranteed for three years.
• Steady State Time: 1-9999 sec. (1-600 sec. recommended)
• Wafer Sizes for the HEATPULSE 610: 2″, 3″, 4″, 5″ and 6″.
• Process Gases: The HEATPULSE system delivers one non-corrosive process gas with manually controlled flow. Two process gas inputs installed.

Associated Environmental LH 1.5 Benchtop Temperature Humidity Chamber. LH-1.5 model is a compact laboratory benchtop environmental test chamber. It's known for its exceptional ability to tune into and control temperature and humidity performance, within -20°C to +94°C (-4°F to +201.2°F) and 10% RH to 95% RH. Inside dimensions 14"W x 13"D x 13"H. 3" cable port on side of chamber. Touch screen digital programmable controller with USB interface. 110V, 60Hz, 15A. Date of manufacture 4/2021. UNIT HAS PERMANENT WATER STAIN ON WINDOW.

A-TECH SYSTEMS Ion Milling System with Magnetron Sputtering Cathode. Research grade Ion milling system with a single Ion gun and a single 3" RF Magnetron Sputtering Cathode. Previously sputtered Titanium. System has a 4" diameter substrate holder with automated rotation and manual angle adjustment. Computer reads angle and speed. System is mostly manual with some computer interface, monitoring and menu selection. The chamber uses a turbo pump for high vacuum and a manual gate valve. There are MFC gas controllers, Ar 100 sccm, Ar 10 sccm, Kr 10 sccm, Xe 10 sccm.

TV Technologie SRO 702 IR Vacuum Reflow Brazing RTA. The perfect soldering systems, solder reflow ovens (SRO) with rapid thermal annealing and brazing capability are IR lamp heated multi-purpose cold wall process ovens. The SRO is ideal for R&D, process development as well for low to high volume production. Die attachment, IGBT/DBC, high vacuum encapsulation, MEMS package sealing, IR sensor/Crystal package sealing, wafer level
packaging, thermo electric cooler/Peltier, low moisture package sealing, high power LED, laser bar, Getter activation, alloying, wafer bump/solder ball reflow, pin fin heat sink, backing, flip chip, 3 D-CSP, diffusion bonding, CPV, thermo compression bonding, pin fins, Hybrid assembly, MMIC die attachment, power modules, electric vehicle controls, power solar cells. Temperature: up to 1100°C.  Fast heated plate ramping. Ramping up >3.5°C/sec. Ramping down >    2°C/sec. Rapid single wafer processing >    50°C/sec.  Heated Area: 147 x 217mm. 208V, 3 Ph, 60 Hz, 25A, CE.

Baron Blakeslee MVR-44LE Precision Vapor Degreaser with SMH-10 Hoist. Vapor immersion cleaning only. Inside dimensions 37"L x 12"W x 21"H. ⦁ 100% Freeboard Ratio. Refrigerated Primary Condensing Coils, REfrigerant used R-134A and R-404A.  Vapor Trap™ Sub-Zero Refrigerated Secondary Coils. Hot Gas Bypass For Primary Refrigeration. Stainless Steel Construction. Stainless Steel Condensing Coils. Fully Insulated Tanks. Sliding Stainless cover. 208V, 1Ph, 60Hz