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Plasma Etchers - Ashers - Ion Mills

Used Trion Technology Sirus T2

Inventory Number: 63054
Now (USD): $32,000.00

Tabletop RIE Reactive Ion Etcher. Plasma etching system designed to etch dielectrics and other films that require fluorine-based chemistries. Processes have been developed for etching silicon, silicon dioxide, silicon nitride, quartz, polyimide, tantalum, tungsten and other materials. Small footprint and robust design make it ideal for the lab environment. Good profile control, high sensitivity and good uniformity. 200mm bottom electrode. PC interface with touchscreen. Four MFC gas inputs, previous gases used AR, SF6, O2, CF4. Automatic tuning with 13.56 MHz 600W RF generator. Automatic pressure control package. Includes recirculating chiller. Turbo pump and roughing pump included. Endpoint detection in photo can be added at additional price. Year of Mfg.: 2011. Very Nice Condition.

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Used Ulvac Phoenix Enviro I

Inventory Number: 60465
Now (USD): $35,000.00

Single Chamber Multiple Step RF & Microwave Plasma Asher. Production proven resist strip and residue cleaning solution. 120/208V, 3 Ph, 50/60 Hz, 42A. Came out of working environment but did not see it running. Can be set up and fully tested at additional cost. Sold As Is.

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Used Xactix e1

Inventory Number: 62366
Now (USD): $39,000.00

XeF2 Xenon Diflouride Etching System. Upgraded by Xactix with continuous flow of XeF2 to allow for extremely short or long etch times. Standard Features: Pulsed flow etching process. PC based control software manages recipes, logs data and manages multiple users with password protection. Open load system to handle multiple types of substrates (wafers, chips, dicing frames, packages) without special handling substrates. Transparent process chamber lid and shower head over full water allows visual inspection of the entire wafer. MFC continuous flow adds a second type of process, a continuous flow of XeF2. This is in addition to the standard pulsed flow etching. The continuous flow process recipe includes the flow rate of XeF2, the pressure of the process chamber and the time to etchcomputer. Etch Rates: 0.1 micrometers/min - 10 micrometers/min. WIW Uniformity: Less than 15 percent. R2R Repeatability: Less than 15 percent. Optional MFC Based Continuous Flow Range: 0.2 sccm - 2 sccm (standard). Chamber Pressure Range: 0.2 Torr - 3 Torr.

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