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Plasma Etchers - Ashers - Ion Mills

Used Tegal 900E

Inventory Number: 33748
Now (USD): $3,950.00

Cassette to Cassette Photoresist Strip/Backside Etching. Spatula wafer transport from cassette to cassette. Users are guided through programming and operation by menu-driven software and soft-keys via a built in display and an external terminal. System is currently configured for 4 in. wafers. Sold As Is.

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Used Tegal 803

Inventory Number: 36279
Now (USD): $750.00

Inline Automatic Plasma Etcher. The Plasma Inline 803 is a fully automatic, microprocessor-based plasma chemistry etcher designed especially for the etching of silicon dioxide (Si02) thin film deposited on single crystal or polysilicon semiconductor wafers. It provides up to four process gases, two process channels and a clean channel. Sold As Is. Does not come with monitor or RF generator.

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Used Tepla America PlasmaPen

Inventory Number: 63046
Now (USD): $9,500.00

Atmospheric High Density Plasma Cleaning/Etching System. Self contained unit that operates at atmospheric pressure. High density plasma, broad material application capability. Width of Treatment Band: 3-10 mm. Small blemish on front panel. 120V, 1 Ph, 60 Hz, 8A, CE.

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Used Trion Technology Minilock

Inventory Number: 56453
Now (USD): $9,500.00

Single Wafer RIE Etcher. LCD display. Load lock with transfer arm. Current substrate carrier for up to 150mm wafers. Five MFC for gas input. Missing RF generator and vacuum pump. Sold As Is.

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Used Trion Technology Phantom II

Inventory Number: 57573
Now (USD): $59,000.00

ICP Inductively Coupled Plasma Etch System. For applications requiring a downstream, high density plasma source. Allows for higher plasma densities at lower pressures. Tight anisotropy in high aspect ratio structures and reduces microloading effect. Four MFC gas inputs mounted in seperate cabinet. System has turbo pump and roughing pump. Two RFX-600 13.56 MHz RF generators. 200mm substrate chuck.

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Used Trion Technology Sirus T2

Inventory Number: 63054
Now (USD): $32,000.00

Tabletop RIE Reactive Ion Etcher. Plasma etching system designed to etch dielectrics and other films that require fluorine-based chemistries. Processes have been developed for etching silicon, silicon dioxide, silicon nitride, quartz, polyimide, tantalum, tungsten and other materials. Small footprint and robust design make it ideal for the lab environment. Good profile control, high sensitivity and good uniformity. 200mm bottom electrode. PC interface with touchscreen. Four MFC gas inputs, previous gases used AR, SF6, O2, CF4. Automatic tuning with 13.56 MHz 600W RF generator. Automatic pressure control package. Includes recirculating chiller. Turbo pump and roughing pump included. Endpoint detection in photo can be added at additional price. Year of Mfg.: 2011. Very Nice Condition.

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Used Ulvac Phoenix Enviro I

Inventory Number: 60465
Now (USD): $35,000.00

Single Chamber Multiple Step RF & Microwave Plasma Asher. Production proven resist strip and residue cleaning solution. 120/208V, 3 Ph, 50/60 Hz, 42A. Came out of working environment but did not see it running. Can be set up and fully tested at additional cost. Sold As Is.

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Used Xactix e1

Inventory Number: 62366
Now (USD): $39,000.00

XeF2 Xenon Diflouride Etching System. Upgraded by Xactix with continuous flow of XeF2 to allow for extremely short or long etch times. Standard Features: Pulsed flow etching process. PC based control software manages recipes, logs data and manages multiple users with password protection. Open load system to handle multiple types of substrates (wafers, chips, dicing frames, packages) without special handling substrates. Transparent process chamber lid and shower head over full water allows visual inspection of the entire wafer. MFC continuous flow adds a second type of process, a continuous flow of XeF2. This is in addition to the standard pulsed flow etching. The continuous flow process recipe includes the flow rate of XeF2, the pressure of the process chamber and the time to etchcomputer. Etch Rates: 0.1 micrometers/min - 10 micrometers/min. WIW Uniformity: Less than 15 percent. R2R Repeatability: Less than 15 percent. Optional MFC Based Continuous Flow Range: 0.2 sccm - 2 sccm (standard). Chamber Pressure Range: 0.2 Torr - 3 Torr.

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