Used Plasmatherm SLR 720/720

March Instruments PX 1000E8 Plasma Asher/Etcher with Pneumatic Vertical Door. Batch system for plasma cleaning or etching. Currently configured with vertical shelves: 18 in. x 6 in. RFX 600 13.56 MHz RF generator. Two gas inputs. Does not include vacuum pump at this price, additional cost depending on type required. Shelves are mounted vertically from top to bottom. Not standard horizontal mounting.

Anatech SP100 Table Top Plasma System. For plasma cleaning of small parts or for modifying surfaces. Digital countdown timer. Analog pressure display. Gas flow with needle valve control. RF Power Source: 100W at 13.56 MHz. Quartz Chamber: 4 in. x 8 in. Includes vacuum pump. 110V, 60 Hz, 10A.

PVA TEPLA 660 Microwave Plasma Cleaning System. Low-pressure microwave plasma systems for cleaning advanced chip packages prior to die attach, wire bond and encapsulation. The electrode-free energy feeding is the key factor for processing substrates in their original, unslotted magazines. Microwaves of 2.45 GHz are simply applied through a window in the wall of the vacuum chamber producing a largely extended plasma there. Unslotted magazines are processed in a downstream configuration, slotted magazines are more properly placed on a rotating platform. Any size of magazine can be processed. Due to the use of microwaves the plasma systems 400 and 660 provide for fast and damage-free plasma processing. In these plasma systems the plasma cleaning effect is based on chemical reactions of reactive plasma particles (radicals) guided through the substrate carriers. The systems are easy to operate and feature simpliest loading and unloading, manually as well as automatically. System software complies with standards in semiconductor industries. Currently configured with three gas inputs plus purge gas. Chamber size 15" x 15" x 15". System comes with rotary vane vacuum pump.

PVA TEPLA ION 100 Plasma Treatment System.

Features Include:

• Plug and play self installation
• Flexible electrodes
• Industrial computer with LCD touch panel and keyboard.
• Windows based operating system.
• Graphical User Interface (GUI) software complies with
• CFR Title 21 Part 11 and Semi E95-1101
• Multi-level user access
• Software
  • Recipe editor for fast and versatile step controls
  • Onboard diagnostic features and alarm logging
  • Remote process monitoring via Ethernet
  • Online web based simulation/training/support
• Pump power outlet on the chassis
• Energy saving feature—pump control

TYPICAL APPLICATIONS:

• Surface cleaning
• Surface activation
• Surface functionalization
• Deposition of siloxane and organic thin films

Technical Data

Process Chamber

Material: Aluminum
Dimension: 375 mm W x 762 mm D x 375 mm H
(14.75”x30”x14.75”)
Volume: 107 L (3.78 ft3)
Electrodes: 7 Shelf- each shelf 12.5" x 24.5"
Number of MFCs: 3
Process Pressure: (0.16 to 2.66) mbar
(120 to 2000) mTorr
Base Pressure: 0.07 mbar (50 mTorr)
Pumping Time: 1 min (Pump dependent)
Loading: Manual

Plasma Generator Frequency/power: 13.56 MHz/1000 W

230V, 3Ph, 50/60Hz

Plasmatherm SLR ICP Shuttle Lock ICP Inductively Coupled Plasma Etch System. PC controller. Vacuum load lock with wafer transfer robot. Can process wafers from 2” to 8” depending on which process kit is installed. Currently configured with 4” kit.  High frequency RF-based inductively coupled plasma source capable of high density plasma generation. Closed loop pressure control. Turbo pump with roughing pump. Total of eight MFC gas controllers. Includes water chiller and roughing pump. 208V, 3Ph, 60Hz

Jeol IB-09010CP Cross Section Polisher Argon Beam Milling System.
Produces pristine cross sections of samples – hard, soft, or composites without smearing, crumbling, distorting, or contaminating them in any way. The ability to create perfect cross sections of paper, shale, yeast, latex beads, coatings, and wire bonds, or to create a mirrored surface on soft materials such as gold, polymers, ceramics, and glass has greatly enhanced research and analysis for many of our customers. The CP uses an argon beam to mill cross sections or polish virtually any material that is affi xed to the continuously rotating sample holder. The high power optical microscope allows the user to position a sample to within a few microns of the precise cross section position. During milling, the sample is rocked automatically to avoid creating beam striations on the cross sectioned surface. Due to the glancing incidence of the ion beam, argon is not implanted into the sample surface. 100-120V, 50/60Hz, 5A

A-TECH SYSTEMS Ion Milling System with Magnetron Sputtering Cathode. Research grade Ion milling system with a single Ion gun and a single 3" RF Magnetron Sputtering Cathode. Previously sputtered Titanium. System has a 4" diameter substrate holder with automated rotation and manual angle adjustment. Computer reads angle and speed. System is mostly manual with some computer interface, monitoring and menu selection. The chamber uses a turbo pump for high vacuum and a manual gate valve. There are MFC gas controllers, Ar 100 sccm, Ar 10 sccm, Kr 10 sccm, Xe 10 sccm.

Plasmatherm SLR ICP Shuttle Lock ICP Inductively Coupled Plasma Etch System. PC controller. Vacuum load lock with wafer transfer robot. Can process wafers from 2” to 8” depending on which process kit is installed. Currently configured with 4” kit.  High frequency RF-based inductively coupled plasma source capable of high density plasma generation. Closed loop pressure control. Turbo pump with roughing pump. Total of eight MFC gas controllers. Includes water chiller and roughing pump. 208V, 3Ph, 60Hz