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Plasmatherm

Used Plasmatherm 790 6-inch RIE

Inventory Number: 55594
Now (USD): Contact for Price

THIS UNIT IS SOLD. WE WOULD LIKE TO BUY YOUR PLASMA THERM SYSTEMS. PLEASE CONTACT US IF YOU HAVE SYSTEMS TO SELL. * * * * * * * * * * * * * * * * * * * * * * * * * * Reactive Ion Etcher. Computer controlled plasma processing tool. Substrate electrode 7 in. dia. holds a 6 in. wafer. Shower head gas introduction. 500W, 13.56 MHz RF generator. Turbo pumped vacuum system. Includes roughing pump. 7 gas inputs controlled via MFC. 208V, 3 Ph, 60 Hz.

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Used Plasmatherm SLR 770/770MF

Inventory Number: 58792
Now (USD): $90,000.00

Load Locked Dual Chamber Plasma Etching System. One chamber configured for RIE and the other for ECR. PC controller with graphical user interface. System was refurbished in 2012 and installed at customer site. Unit never went into production due to facility closing. Leasing company selling to recoup costs. Missing the Leybold 1000C turbo pump. $90,000 or best offer. Sold Untested As Is.

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Used Plasmatherm 790 MF

Inventory Number: 60293
Now (USD): $49,000.00

Plasma RIE Reactive Ion Etch System. PC controlled plasma etching system. Single process chamber with shower head style gas input and a 7 in. dia. platen. 500W, 13.56 MHz RF generator. Five MFC gas flow channels, previous gases used: HC-23, N2, 02, SF6. Roughing pump with blower. Does not include water chiller.

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Used Plasmatherm SLR

Inventory Number: 62604
Now (USD): $59,000.00

PECVD Plasma Enhanced Chemical Vapor Deposition System. Load locked parallel plate PECVD system. Windows graphical user interface provides an easy and familiar environment for machine operation and control. The top electrode is RF powered and the substrate is temperature controlled. Gas box is configured with eight gas input lines controlled by MFC. Previously used the following gases: CF4, SF6, AR, HE, NH3, Silane, N2O, SiN, N2. Includes Neslab chiller, roughing pump and power box.

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Used Plasmatherm SLR-770 ICP

Inventory Number: 62603
Now (USD): $110,000.00

Shuttle Lock ICP Inductively Coupled Plasma Etch System. PC controller. Vacuum load lock with wafer transfer robot. Can process wafers from 2 in. to 8 in. depending on which process kit is installed. Currently configured with 3 in. kit. Thermal transfer module for effective cooling of substrate utilizing helium backside thermal transfer in conjunction with computer controlled substrate clamping. High frequency RF-based inductively coupled plasma source capable of high density plasma generation. Closed loop pressure control. Turbo pump with roughing pump. Total of eight MFC gas controllers. Previous gases used N2, O2, CHF3, AR, CH4, CL2, BCL3, CF4. Includes water chiller.

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